2MBI200S-120 igbt module 1200v / 200a 2 in one-package features high speed switching voltage drive low inductance module structure applications inverter for motor drive ac and dc servo drive amplifier uninterruptible power supply industrial machines, such as welding machines thermal resistance characteristics thermal resistance ? ? 0.085 ? ? 0.18 ? 0.025 ? igbt diode the base to cooling fin c/w c/w c/w * 2 : this is the value which is defined mounting on the additional cooling fin with thermal compound equivalent circuit schematic g1 e1 g2 e2 c1 e2 c2e1 item symbol characteristics conditions unit min. typ. max. rth(j-c) rth(j-c) rth(c-f)* 2 maximum ratings and characteristics absolute maximum ratings (at tc=25c unless otherwise specified) item symbol collector-emitter voltage v ces gate-emitter voltaga v ges collector continuous tc=25c ic current t c=80c 1ms tc=25c ic pulse tc=80c -i c 1ms -i c pulse max. power dissipation p c operating temperature t j storage temperature t stg isolation voltage * 1 v is screw torque mounting * 2 terminals * 2 rating 1200 20 300 200 600 400 200 400 1500 +150 -40 to +125 ac 2500 (1min. ) 3.5 4.5 unit v v a a a a a a w c c v nm nm * 1 : aii terminals should be connected together when isolation test will be done * 2 : recommendable value : mounting 2.5 to 3.5 nm(m5 or m6) terminals 3.5 to 4.5 nm(m6) item zero gate voltage collector current gate-emitter leakage current gate-emitter threshold voltage collector-emitter saturation voltage input capacitance output capacitance reverse transfer capacitance turn-on time turn-off time forward on voltage reverse recovery time i ces i ges v ge(th) v ce(sat) c ies c oes c res t on t r t r(i) t off t f v f t rr ? ? 1.0 ? ? 0.4 5.5 7.2 8.5 ? 2.3 2.6 ? 2.8 ? ? 24000 ? ? 5000 ? ? 4400 ? ? 0.35 1.2 ? 0.25 0.6 ? 0.1 ? ? 0.45 1.0 ? 0.08 0.3 ? 2.3 3.0 ? 2.0 ? ? ? 0.35 v ge =0v, v ce =1200v v ce =0v, v ge =20v v ce =20v, i c =200ma tc=25 c v ge =15v, i c =200a tc=125c v ge =0v v ce =10v f=1mhz v cc =600v i c =200a v ge =15v r g =4.7 ohm tj=25c i f =200a, v ge =0v tj=125c i f =200a ma a v v pf s v s electrical characteristics (at tj=25c unless otherwise specified) symbol characteristics conditions unit min. typ. max.
2MBI200S-120 igbt module characteristics (representative) 012345 0 100 200 300 400 500 8v 10v 12v 15v vge= 20v collector current vs. collector-emiiter voltage tj= 25c (typ.) collector current : ic [ a ] collector - emitter voltage : vce [ v ] 012345 0 100 200 300 400 500 8v 10v 12v 15v vge= 20v collector current vs. collector-emiiter voltage tj= 125c (typ.) collector - emitter voltage : vce [ v ] collector current : ic [ a ] 012345 0 100 200 300 400 500 tj= 25c tj= 125c collector current vs. collector-emiiter voltage vge=15v (typ.) collector - emitter voltage : vce [ v ] collector current : ic [ a ] 5 10152025 0 2 4 6 8 10 ic=100a ic= 200a ic= 400a collector-emiiter voltage vs. gate-emitter voltage tj= 25c (typ.) collector - emitter voltage : vce [ v ] gate - emitter voltage : vge [ v ] 0 5 10 15 20 25 30 35 500 1000 5000 10000 100000 capacitance vs. collector-emiiter voltage (typ.) vge=0v, f= 1mhz, tj= 25c capacitance : cies, coes, cres [ pf ] collector - emitter voltage : vce [ v ] coes cres cies 0 500 1000 1500 2000 0 200 400 600 800 1000 dynamic gate charge (typ.) vcc=600v, ic=200a, tj= 25c gate charge : qg [ nc ] collector - emitter voltage : vce [ v ] 0 5 10 15 20 25 gate - emitter voltage : vge [ v ]
2MBI200S-120 igbt module 0 100 200 300 50 100 500 1000 ton tr toff tf switching time vs. collector current (typ.) vcc=600v, vge=15v, rg= 4.7ohm, tj= 25c switching time : ton, tr, toff, tf [ nsec ] collector current : ic [ a ] 0 100 200 300 50 100 500 1000 tf tr ton toff switching time vs. collector current (typ.) vcc=600v, vge=15v, rg= 4.7ohm, tj= 125c collector current : ic [ a ] switching time : ton, tr, toff, tf [ nsec ] 1 10 100 50 100 500 1000 5000 toff ton tr tf switching time vs. gate resistance (typ.) vcc=600v, ic=200a, vge=15v, tj= 25c gate resistance : rg [ohm] switching time : ton, tr, toff, tf [ nsec ] 0 100 200 300 400 0 20 40 60 err(25c) eoff(25c) eon(25c) err(125c) eoff(125c) eon(125c) switching loss vs. collector current (typ.) vcc=600v, vge=15v, rg=4.7ohm switching loss : eon, eoff, err [ mj/pulse ] collector current : ic [ a ] 1 10 100 0 40 80 120 160 switching loss vs. gate resistance (typ.) vcc=600v, ic=200a, vge=15v, tj= 125c switching loss : eon, eoff, err [ mj/pulse ] gate resistance : rg [ohm] eon err eoff 0 200 400 600 800 1000 1200 1400 0 50 100 150 200 250 300 350 400 450 reverse bias safe operating area +vge=15v, -vge=<15v, rg=>4.7ohm, tj=<125c collector - emitter voltage : vce [ v ] collector current : ic [ a ]
2MBI200S-120 igbt module outline drawings, mm mass : 370g 01234 0 100 200 300 400 500 tj=25c tj=125c forward current vs. forward on voltage (typ.) forward current : if [ a ] forward on voltage : vf [ v ] 0 100 200 300 10 100 500 irr(125c) irr(25c) trr(25c) trr(125c) reverse recovery characteristics (typ.) vcc=600v, vge=15v, rg=4.7ohm forward current : if [ a ] reverse recovery current : irr [ a ] reverse recovery time : trr [ nsec ] 0.001 0.01 0.1 1 1e-3 0.01 0.05 0.1 1 transient thermal resistance thermal resistanse : rth(j-c) [ c/w ] pulse width : pw [ sec ] fwd igbt
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